All MOSFET. IXTP60N20T Datasheet

 

IXTP60N20T Datasheet and Replacement


   Type Designator: IXTP60N20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 73 nC
   tr ⓘ - Rise Time: 118 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO220
 

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IXTP60N20T Datasheet (PDF)

 ..1. Size:135K  ixys
ixta60n20t ixtp60n20t ixtq60n20t.pdf pdf_icon

IXTP60N20T

TrenchTM VDSS = 200VIXTA60N20TPower MOSFET ID25 = 60AIXTP60N20T RDS(on) 40m IXTQ60N20TTO-263 AA (IXTA)N-Channel Enhancement ModeFor PDP DriversGAvalanche RatedSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C, RGS = 1M 200 VGVGSS Continuous 20 VDD (

 7.1. Size:288K  ixys
ixta60n10t ixtp60n10t.pdf pdf_icon

IXTP60N20T

TrenchTM VDSS = 100VIXTA60N10TID25 = 60APower MOSFETIXTP60N10T RDS(on) 18m N-Channel Enhancement ModeTO-263Avalanche Rated(IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 175C 100 V(IXTP)VDGR TJ = 25C to 175C, RGS = 1M 100 VVGSS Continuous 20 VVGSM Transient 30 VG

 9.1. Size:252K  ixys
ixta62n15p ixtp62n15p ixtq62n15p.pdf pdf_icon

IXTP60N20T

IXTA 62N15P VDSS = 150 VPolarHTTMIXTP 62N15P ID25 = 62 APower MOSFETIXTQ 62N15P RDS(on) 40 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VGSVDGR TJ = 25 C to 175 C; RGS = 1 M 150 V(TAB)VGS Continuous 20 VVGSM Transient 30 VTO-220 (I

 9.2. Size:206K  ixys
ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf pdf_icon

IXTP60N20T

Preliminary Technical InformationDepletion Mode VDSX = 500VIXTA6N50D2MOSFET ID(on) > 6AIXTP6N50D2 RDS(on) 500m IXTH6N50D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ - 55 .

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF9332 | SSF60R075SFD2

Keywords - IXTP60N20T MOSFET datasheet

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