All MOSFET. IXTP60N28TM-A Datasheet

 

IXTP60N28TM-A MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTP60N28TM-A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 280 V

Maximum Drain Current |Id|: 18 A

Rise Time (tr): 170 nS

Maximum Drain-Source On-State Resistance (Rds): 0.058 Ohm

Package: TO220

IXTP60N28TM-A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP60N28TM-A Datasheet (PDF)

2.1. ixta60n20t ixtp60n20t ixtq60n20t.pdf Size:135K _ixys

IXTP60N28TM-A
IXTP60N28TM-A

TrenchTM VDSS = 200V IXTA60N20T Power MOSFET ID25 = 60A IXTP60N20T ? ? RDS(on) ? ? ? 40m? ? ? ? ? IXTQ60N20T TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers G Avalanche Rated S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C, RGS = 1M? 200 V G VGSS Continuous 20 V D D (Tab) S VGSM Transient

5.1. ixtp64n055t ixty64n055t.pdf Size:170K _ixys

IXTP60N28TM-A
IXTP60N28TM-A

Preliminary Technical Information IXTP64N055T VDSS = 55 V TrenchMVTM IXTY64N055T ID25 = 64 A Power MOSFET ? ? RDS(on) ? 13 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C55 V TO-252 (IXTY) VDGR TJ = 25C to 175C; RGS = 1 M? 55 V VGSM Transient 20 V G ID25 TC = 25C64 A IL

5.2. ixtm6n60 ixtm6n60a ixtp6n60 ixtp6n60a.pdf Size:63K _ixys

IXTP60N28TM-A



 5.3. ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf Size:184K _ixys

IXTP60N28TM-A
IXTP60N28TM-A

Preliminary Technical Information Depletion Mode VDSX = 1000V IXTA6N100D2 MOSFET ID(on) > 6A IXTP6N100D2 ? ? RDS(on) ? 2.2? ? ? ? ? ? ? IXTH6N100D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25C to 150C 1000 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 300 W G D D (Tab) TJ - 55 ... +150 C S TJM 1

5.4. ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf Size:206K _ixys

IXTP60N28TM-A
IXTP60N28TM-A

Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 ≤ Ω RDS(on) ≤ 500mΩ ≤ Ω ≤ Ω ≤ Ω IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25°C to 150°C 500 V VGSX Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 300 W G D D (Tab) TJ - 55 .

 5.5. ixta62n15p ixtp62n15p ixtq62n15p.pdf Size:252K _ixys

IXTP60N28TM-A
IXTP60N28TM-A

IXTA 62N15P VDSS = 150 V PolarHTTM IXTP 62N15P ID25 = 62 A Power MOSFET IXTQ 62N15P RDS(on) ? 40 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V G S VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-220 (IXTP) ID25 TC = 25 C62 A IDM

5.6. ixta64n10l2 ixth64n10l2 ixtp64n10l2.pdf Size:167K _ixys

IXTP60N28TM-A
IXTP60N28TM-A

Advance Technical Information LinearL2TM Power VDSS = 100V IXTA64N10L2 MOSFETs w/Extended ID25 = 64A IXTP64N10L2   RDS(on)    32m     FBSOA IXTH64N10L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C

5.7. ixta6n50p ixtp6n50p.pdf Size:229K _ixys

IXTP60N28TM-A
IXTP60N28TM-A

VDSS = 500 V IXTA 6N50P PolarHVTM ID25 = 6 A IXTP 6N50P Power MOSFET ? ? RDS(on) ? 1.1 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Continuous 30 V G S VGSM Transient 40 V (TAB) ID25 TC = 25 C6 A IDM TC = 25 C, pulse width li

Datasheet: IXTP52P10P , IXTP55N075T , IXTP56N15T , IXTP5N50P , IXTP5N60P , IXTP60N10T , IXTP60N10TM , IXTP60N20T , IRF9Z34 , IXTP62N15P , IXTP64N055T , IXTP6N100D2 , IXTP6N50D2 , IXTP6N50P , IXTP70N075T2 , IXTP70N085T , IXTP75N10P .

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