All MOSFET. IXTP6N50D2 Datasheet

 

IXTP6N50D2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTP6N50D2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 96 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220

 IXTP6N50D2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP6N50D2 Datasheet (PDF)

 ..1. Size:206K  ixys
ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf

IXTP6N50D2
IXTP6N50D2

Preliminary Technical InformationDepletion Mode VDSX = 500VIXTA6N50D2MOSFET ID(on) > 6AIXTP6N50D2 RDS(on) 500m IXTH6N50D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ - 55 .

 6.1. Size:229K  ixys
ixta6n50p ixtp6n50p.pdf

IXTP6N50D2
IXTP6N50D2

VDSS = 500 VIXTA 6N50PPolarHVTMID25 = 6 AIXTP 6N50PPower MOSFET RDS(on) 1.1 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuous 30 VGSVGSM Transient 40 V(TAB)ID25 TC = 25 C6 A

 8.2. Size:184K  ixys
ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf

IXTP6N50D2
IXTP6N50D2

Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTA6N100D2MOSFET ID(on) > 6AIXTP6N100D2 RDS(on) 2.2 IXTH6N100D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ -

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History: FDP61N20

 

 
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