All MOSFET. IXTP75N10P Datasheet

 

IXTP75N10P Datasheet and Replacement


   Type Designator: IXTP75N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 120 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO220
 

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IXTP75N10P Datasheet (PDF)

 ..1. Size:252K  ixys
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IXTP75N10P

IXTA 75N10P VDSS = 100 VPolarHTTMIXTP 75N10P ID25 = 75 APower MOSFETIXTQ 75N10P RDS(on) 25 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25 C to 175 C 100 V(TAB)VDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VTO-220 (IXTP)VGSM Transient

 9.1. Size:177K  ixys
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IXTP75N10P

Preliminary Technical InformationIXTA76N075T VDSS = 75 VTrenchMVTMIXTP76N075T ID25 = 76 APower MOSFET RDS(on) 12 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C76 A

 9.2. Size:64K  ixys
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IXTP75N10P

 9.3. Size:182K  ixys
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IXTP75N10P

VDSS = 600 VIXTA 7N60PPolarHVTMID25 = 7 AIXTP 7N60PPower MOSFET RDS(on) 1.1 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25 C to 175 C 600 VVDGR TJ = 25 C to 175 C; RGS = 1 M 600 VVGS Continuous 30 V(TAB)GVGSM Transient 40 VDSID25 TC = 25 C7 A

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Datasheet: IXTP60N28TM-A , IXTP62N15P , IXTP64N055T , IXTP6N100D2 , IXTP6N50D2 , IXTP6N50P , IXTP70N075T2 , IXTP70N085T , 8N60 , IXTP76N075T , IXTP76N25T , IXTP76P10T , IXTP7N60P , IXTP7N60PM , IXTP80N10T , IXTP80N12T2 , IXTP86N20T .

History: 7N10G-AA3 | STP300NH02L | SSI2N90A | 2MI50S-050 | ASDM40N80Q | ASDM4614S | STF11N60M2-EP

Keywords - IXTP75N10P MOSFET datasheet

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