IXTP76P10T MOSFET Datasheet: P-Ch, 100V, 76A. Full specification with pinout and replacement list

IXTP76P10T Specs and Replacement

Type Designator: IXTP76P10T

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 298 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO220

IXTP76P10T substitution

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IXTP76P10T datasheet

8.1. Size:177K ixys
ixta76n075t ixtp76n075t.pdf pdf_icon

Preliminary Technical Information IXTA76N075T VDSS = 75 V TrenchMVTM IXTP76N075T ID25 = 76 A Power MOSFET RDS(on) 12 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C76 A ... See More ⇒

9.1. Size:252K ixys
ixta75n10p ixtp75n10p ixtq75n10p.pdf pdf_icon

IXTA 75N10P VDSS = 100 V PolarHTTM IXTP 75N10P ID25 = 75 A Power MOSFET IXTQ 75N10P RDS(on) 25 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C 100 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V TO-220 (IXTP) VGSM Transient ... See More ⇒

9.2. Size:64K ixys
ixtm7n45 ixtm7n45a ixtm7n50 ixtm7n50a ixtp7n45 ixtp7n45a ixtp7n50 ixtp7n50a.pdf pdf_icon

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9.3. Size:182K ixys
ixta7n60p ixtp7n60p.pdf pdf_icon

VDSS = 600 V IXTA 7N60P PolarHVTM ID25 = 7 A IXTP 7N60P Power MOSFET RDS(on) 1.1 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 175 C 600 V VDGR TJ = 25 C to 175 C; RGS = 1 M 600 V VGS Continuous 30 V (TAB) G VGSM Transient 40 V D S ID25 TC = 25 C7 A... See More ⇒