All MOSFET. IXTP76P10T Datasheet

 

IXTP76P10T MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTP76P10T

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 298 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 76 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 197 nC

Rise Time (tr): 70 nS

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO220

IXTP76P10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP76P10T Datasheet (PDF)

4.1. ixta76n075t ixtp76n075t.pdf Size:177K _ixys

IXTP76P10T
IXTP76P10T

Preliminary Technical Information IXTA76N075T VDSS = 75 V TrenchMVTM IXTP76N075T ID25 = 76 A Power MOSFET ? ? RDS(on) ? 12 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25C76 A ILRMS Lead Current Limit,

5.1. ixtm7n45 ixtm7n45a ixtm7n50 ixtm7n50a ixtp7n45 ixtp7n45a ixtp7n50 ixtp7n50a.pdf Size:64K _ixys

IXTP76P10T



5.2. ixta7n60p ixtp7n60p.pdf Size:182K _ixys

IXTP76P10T
IXTP76P10T

VDSS = 600 V IXTA 7N60P PolarHVTM ID25 = 7 A IXTP 7N60P Power MOSFET ? ? RDS(on) ? 1.1 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 175 C 600 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 600 V VGS Continuous 30 V (TAB) G VGSM Transient 40 V D S ID25 TC = 25 C7 A TO-263 (IXTA) IDM TC = 25 C,

 5.3. ixta75n10p ixtp75n10p ixtq75n10p.pdf Size:252K _ixys

IXTP76P10T
IXTP76P10T

IXTA 75N10P VDSS = 100 V PolarHTTM IXTP 75N10P ID25 = 75 A Power MOSFET IXTQ 75N10P RDS(on) ? 25 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C 100 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V TO-220 (IXTP) VGSM Transient 30 V ID25 TC = 25 C75 A IDM

5.4. ixta70n085t ixtp70n085t.pdf Size:175K _ixys

IXTP76P10T
IXTP76P10T

Preliminary Technical Information IXTA70N085T VDSS = 85 V TrenchMVTM IXTP70N085T ID25 = 70 A Power MOSFET ? ? RDS(on) ? 13.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C85 V VDGR TJ = 25C to 175C; RGS = 1 M? 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25C70 A IDM TC = 25C, pulse wi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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