IXTP76P10T Datasheet and Replacement
Type Designator: IXTP76P10T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 298 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 76 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO220
IXTP76P10T substitution
IXTP76P10T Datasheet (PDF)
ixta76n075t ixtp76n075t.pdf
Preliminary Technical InformationIXTA76N075T VDSS = 75 VTrenchMVTMIXTP76N075T ID25 = 76 APower MOSFET RDS(on) 12 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C76 A
ixta75n10p ixtp75n10p ixtq75n10p.pdf
IXTA 75N10P VDSS = 100 VPolarHTTMIXTP 75N10P ID25 = 75 APower MOSFETIXTQ 75N10P RDS(on) 25 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25 C to 175 C 100 V(TAB)VDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VTO-220 (IXTP)VGSM Transient
ixta7n60p ixtp7n60p.pdf
VDSS = 600 VIXTA 7N60PPolarHVTMID25 = 7 AIXTP 7N60PPower MOSFET RDS(on) 1.1 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25 C to 175 C 600 VVDGR TJ = 25 C to 175 C; RGS = 1 M 600 VVGS Continuous 30 V(TAB)GVGSM Transient 40 VDSID25 TC = 25 C7 A
Datasheet: IXTP6N100D2 , IXTP6N50D2 , IXTP6N50P , IXTP70N075T2 , IXTP70N085T , IXTP75N10P , IXTP76N075T , IXTP76N25T , AO3407 , IXTP7N60P , IXTP7N60PM , IXTP80N10T , IXTP80N12T2 , IXTP86N20T , IXTP88N085T , IXTP8N50P , IXTP8N50PM .
Keywords - IXTP76P10T MOSFET datasheet
IXTP76P10T cross reference
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IXTP76P10T replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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