All MOSFET. IXTP98N075T Datasheet

 

IXTP98N075T Datasheet and Replacement


   Type Designator: IXTP98N075T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 98 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220
 

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IXTP98N075T Datasheet (PDF)

 ..1. Size:302K  cn vbsemi
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IXTP98N075T

IXTP98N075Twww.VBsemi.comN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETaVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0065at VGS = 10 V 8080 0.0070at VGS = 6.0 V 75 17.1 nCAPPLICATIONS0.0085at VGS = 4.5 V 65 Primary Side SwitchingTO-220AB Synchronous RectificationD DC/AC Inverters LED Back

 9.1. Size:215K  ixys
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IXTP98N075T

Preliminary Technical InformationIXTA90N055T VDSS = 55 VTrenchMVTMIXTP90N055T ID25 = 90 APower MOSFET RDS(on) 8.8 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC =

Datasheet: IXTP88N085T , IXTP8N50P , IXTP8N50PM , IXTP90N055T , IXTP90N055T2 , IXTP90N075T2 , IXTP90N15T , IXTP96P085T , IRF540 , IXTQ100N25P , IXTQ102N15T , IXTQ102N20T , IXTQ10P50P , IXTQ110N055P , IXTQ110N10P , IXTQ120N15P , IXTQ120N20P .

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