IXTP98N075T MOSFET Datasheet: N-Ch, 75V, 98A. Full specification with pinout and replacement list

IXTP98N075T Specs and Replacement

   Type Designator: IXTP98N075T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 98 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220

IXTP98N075T substitution

- MOSFET ⓘ Cross-Reference Search

IXTP98N075T datasheet

..1. Size:302K cn vbsemi
ixtp98n075t.pdf pdf_icon

IXTP98N075T www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Back... See More ⇒

9.1. Size:215K ixys
ixta90n055t ixtp90n055t.pdf pdf_icon

Preliminary Technical Information IXTA90N055T VDSS = 55 V TrenchMVTM IXTP90N055T ID25 = 90 A Power MOSFET RDS(on) 8.8 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 TC =... See More ⇒

Detailed specifications: IXTP88N085T , IXTP8N50P , IXTP8N50PM , IXTP90N055T , IXTP90N055T2 , IXTP90N075T2 , IXTP90N15T , IXTP96P085T , IRF540N , IXTQ100N25P , IXTQ102N15T , IXTQ102N20T , IXTQ10P50P , IXTQ110N055P , IXTQ110N10P , IXTQ120N15P , IXTQ120N20P .