All MOSFET. IXTQ180N085T Datasheet

 

IXTQ180N085T Datasheet and Replacement


   Type Designator: IXTQ180N085T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 430 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 63 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO3P
 

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IXTQ180N085T Datasheet (PDF)

 ..1. Size:203K  ixys
 ixth180n085t ixtq180n085t.pdf pdf_icon

IXTQ180N085T

Preliminary Technical InformationIXTH180N085T VDSS = 85 VTrenchMVTMIXTQ180N085T ID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VTO-

 5.1. Size:108K  ixys
 ixta180n055t ixtp180n055t ixtq180n055t.pdf pdf_icon

IXTQ180N085T

Advance Technical InformationIXTQ 180N055T VDSS = 55 VTrench GateIXTA 180N055T ID25 = 180 APower MOSFETIXTP 180N055T RDS(on) = 4.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VGVDGR TJ = 25C to 175C; RGS = 1 M 55 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 180 AIDRM

 6.1. Size:205K  ixys
 ixth180n10t ixtq180n10t.pdf pdf_icon

IXTQ180N085T

Preliminary Technical InformationIXTH180N10T VDSS = 100 VTrenchMVTMIXTQ180N10T ID25 = 180 APower MOSFET RDS(on) 6.4 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C 100 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGSM Transient 30 VTO

 8.1. Size:211K  ixys
 ixth182n055t ixtq182n055t.pdf pdf_icon

IXTQ180N085T

Preliminary Technical InformationIXTH182N055T VDSS = 55 VTrenchMVTMIXTQ182N055T ID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VTO-3P

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Datasheet: IXTQ150N06P , IXTQ150N15P , IXTQ152N085T , IXTQ160N075T , IXTQ160N085T , IXTQ160N10T , IXTQ16N50P , IXTQ170N10P , AON7408 , IXTQ180N10T , IXTQ182N055T , IXTQ18N60P , IXTQ200N06P , IXTQ200N075T , IXTQ200N085T , IXTQ200N10T , IXTQ220N055T .

History: PMZB950UPE | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | SI8402DB | AP60SL650AFI

Keywords - IXTQ180N085T MOSFET datasheet

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