IXTQ18N60P Datasheet. Specs and Replacement

Type Designator: IXTQ18N60P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TO3P

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IXTQ18N60P substitution

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IXTQ18N60P datasheet

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IXTQ18N60P

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 ixth182n055t ixtq182n055t.pdf pdf_icon

IXTQ18N60P

Preliminary Technical Information IXTH182N055T VDSS = 55 V TrenchMVTM IXTQ182N055T ID25 = 182 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V TO-3P ... See More ⇒

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IXTQ18N60P

Preliminary Technical Information IXTH180N10T VDSS = 100 V TrenchMVTM IXTQ180N10T ID25 = 180 A Power MOSFET RDS(on) 6.4 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C 100 V S VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V TO... See More ⇒

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IXTQ18N60P

Preliminary Technical Information IXTH180N085T VDSS = 85 V TrenchMVTM IXTQ180N085T ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V TO-... See More ⇒

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Detailed specifications: IXTQ160N075T, IXTQ160N085T, IXTQ160N10T, IXTQ16N50P, IXTQ170N10P, IXTQ180N085T, IXTQ180N10T, IXTQ182N055T, AON7408, IXTQ200N06P, IXTQ200N075T, IXTQ200N085T, IXTQ200N10T, IXTQ220N055T, IXTQ220N075T, IXTQ22N50P, IXTQ22N60P

Keywords - IXTQ18N60P MOSFET specs

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