All MOSFET. IXTQ18N60P Datasheet

 

IXTQ18N60P Datasheet and Replacement


   Type Designator: IXTQ18N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 500 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: TO3P
 

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IXTQ18N60P Datasheet (PDF)

 ..1. Size:171K  ixys
 ixtq18n60p ixtv18n60p.pdf pdf_icon

IXTQ18N60P

IXTQ 18N60P VDSS = 600 VPolarHVTMIXTV 18N60P ID25 = 18 APower MOSFET IXTV 18N60PS RDS(on) 420 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 30 VGVGSM Tranisent 40 VD (TAB)DSID25 TC = 25

 8.1. Size:211K  ixys
 ixth182n055t ixtq182n055t.pdf pdf_icon

IXTQ18N60P

Preliminary Technical InformationIXTH182N055T VDSS = 55 VTrenchMVTMIXTQ182N055T ID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VTO-3P

 8.2. Size:205K  ixys
 ixth180n10t ixtq180n10t.pdf pdf_icon

IXTQ18N60P

Preliminary Technical InformationIXTH180N10T VDSS = 100 VTrenchMVTMIXTQ180N10T ID25 = 180 APower MOSFET RDS(on) 6.4 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C 100 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGSM Transient 30 VTO

 8.3. Size:203K  ixys
 ixth180n085t ixtq180n085t.pdf pdf_icon

IXTQ18N60P

Preliminary Technical InformationIXTH180N085T VDSS = 85 VTrenchMVTMIXTQ180N085T ID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VTO-

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Datasheet: IXTQ160N075T , IXTQ160N085T , IXTQ160N10T , IXTQ16N50P , IXTQ170N10P , IXTQ180N085T , IXTQ180N10T , IXTQ182N055T , IRLZ44N , IXTQ200N06P , IXTQ200N075T , IXTQ200N085T , IXTQ200N10T , IXTQ220N055T , IXTQ220N075T , IXTQ22N50P , IXTQ22N60P .

History: FQP1P50 | CHM6308SGP

Keywords - IXTQ18N60P MOSFET datasheet

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