IXTQ36P15P Datasheet. Specs and Replacement

Type Designator: IXTQ36P15P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 228 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO3P

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IXTQ36P15P datasheet

 8.1. Size:361K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p.pdf pdf_icon

IXTQ36P15P

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒

 8.2. Size:402K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p ixtv36n50ps.pdf pdf_icon

IXTQ36P15P

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒

 8.3. Size:252K  ixys
 ixta36n30p ixtp36n30p ixtq36n30p.pdf pdf_icon

IXTQ36P15P

IXTA 36N30P VDSS = 300 V PolarHTTM IXTP 36N30P ID25 = 36 A Power MOSFET IXTQ 36N30P RDS(on) 110 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V S D(TAB) VGS Continuous 30 V VGSM Transient 40 V TO-220 ... See More ⇒

 8.4. Size:240K  inchange semiconductor
 ixtq36n50p.pdf pdf_icon

IXTQ36P15P

isc N-Channel MOSFET Transistor IXTQ36N50P FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

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Detailed specifications: IXTQ30N50L, IXTQ30N50L2, IXTQ30N50P, IXTQ30N60L2, IXTQ30N60P, IXTQ32P20T, IXTQ36N30P, IXTQ36N50P, IRFP450, IXTQ40N50L2, IXTQ40N50Q, IXTQ42N25P, IXTQ44N50P, IXTQ44P15T, IXTQ450P2, IXTQ460P2, IXTQ470P2

Keywords - IXTQ36P15P MOSFET specs

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