IXTQ450P2 Datasheet. Specs and Replacement

Type Designator: IXTQ450P2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm

Package: TO3P

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IXTQ450P2 substitution

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IXTQ450P2 datasheet

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 ixtp450p2 ixth450p2 ixtq450p2.pdf pdf_icon

IXTQ450P2

Advance Technical Information PolarP2TM VDSS = 500V IXTP450P2 ID25 = 16A Power MOSFET IXTQ450P2 RDS(on) 330m IXTH450P2 trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) Fast Intrinsic Diode G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RG... See More ⇒

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 ixtq470p2.pdf pdf_icon

IXTQ450P2

Advance Technical Information PolarP2TM VDSS = 500V IXTQ470P2 ID25 = 42A Power MOSFET RDS(on) 145m trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V G D VGSS Continuous 30 V S Tab VGSM ... See More ⇒

 9.2. Size:148K  ixys
 ixtq44n50p.pdf pdf_icon

IXTQ450P2

IXTQ 44N50P VDSS = 500 V PolarHVTM ID25 = 44 A Power MOSFET RDS(on) 140 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V VGSM Transient 40 V G ID25 TC = 25 C44 A D (TAB) IDM TC = 25... See More ⇒

 9.3. Size:154K  ixys
 ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf pdf_icon

IXTQ450P2

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V... See More ⇒

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Detailed specifications: IXTQ36N30P, IXTQ36N50P, IXTQ36P15P, IXTQ40N50L2, IXTQ40N50Q, IXTQ42N25P, IXTQ44N50P, IXTQ44P15T, IRF1407, IXTQ460P2, IXTQ470P2, IXTQ480P2, IXTQ48N20T, IXTQ50N20P, IXTQ50N25T, IXTQ50N28T, IXTQ52N30P

Keywords - IXTQ450P2 MOSFET specs

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