IXTQ52P10P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTQ52P10P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 52 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 120 nS
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: TO3P
IXTQ52P10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTQ52P10P Datasheet (PDF)
4.1. ixtq52n30p ixtt52n30p.pdf 
Size:168K _ixys
IXTQ52N30P VDSS = 300 V PolarHTTM IXTT52N30P ID25 = 52 A Power MOSFET ? ? RDS(on) ? 66 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V VGSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C52 A D (TAB) S IDM TC = 25 C, pulse width l
5.1. ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf Size:230K _ixys
IXTA50N25T IXTQ50N25T Trench Gate VDSS = 250V IXTP50N25T IXTH50N25T ID25 = 50A Power MOSFET ? ? RDS(on) ? 60m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) D D (Tab) D (Tab) S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M? 250 V VGSM Transient
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
