IXTQ60N10T MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXTQ60N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 59 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO3P

IXTQ60N10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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