All MOSFET. IXTQ76N25T Datasheet

 

IXTQ76N25T Datasheet and Replacement


   Type Designator: IXTQ76N25T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 76 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 148 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO3P
 

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IXTQ76N25T Datasheet (PDF)

 9.1. Size:252K  ixys
 ixta75n10p ixtp75n10p ixtq75n10p.pdf pdf_icon

IXTQ76N25T

IXTA 75N10P VDSS = 100 VPolarHTTMIXTP 75N10P ID25 = 75 APower MOSFETIXTQ 75N10P RDS(on) 25 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25 C to 175 C 100 V(TAB)VDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VTO-220 (IXTP)VGSM Transient

 9.2. Size:170K  ixys
 ixtq74n20p ixtt74n20p.pdf pdf_icon

IXTQ76N25T

IXTQ 74N20P VDSS = 200 VPolarHTTMIXTT 74N20P ID25 = 74 APower MOSFET RDS(on) 34 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 200 VVDGR TJ = 25 C to 175 C; RGS = 1 M 200 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C74 A(TAB

Datasheet: IXTQ60N20L2 , IXTQ60N20T , IXTQ62N15P , IXTQ64N25P , IXTQ69N30P , IXTQ69N30PM , IXTQ74N20P , IXTQ75N10P , IRFZ48N , IXTQ82N25P , IXTQ86N20T , IXTQ86N25T , IXTQ88N28T , IXTQ88N30P , IXTQ90N15T , IXTQ96N15P , IXTQ96N20P .

History: OSG70R1K4FF | PMZ320UPE | IXTA4N150HV | SLD60R380S2

Keywords - IXTQ76N25T MOSFET datasheet

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