IXTQ76N25T Datasheet. Specs and Replacement

Type Designator: IXTQ76N25T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 460 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 148 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TO3P

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IXTQ76N25T substitution

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IXTQ76N25T datasheet

 9.1. Size:252K  ixys
 ixta75n10p ixtp75n10p ixtq75n10p.pdf pdf_icon

IXTQ76N25T

IXTA 75N10P VDSS = 100 V PolarHTTM IXTP 75N10P ID25 = 75 A Power MOSFET IXTQ 75N10P RDS(on) 25 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C 100 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V TO-220 (IXTP) VGSM Transient ... See More ⇒

 9.2. Size:170K  ixys
 ixtq74n20p ixtt74n20p.pdf pdf_icon

IXTQ76N25T

IXTQ 74N20P VDSS = 200 V PolarHTTM IXTT 74N20P ID25 = 74 A Power MOSFET RDS(on) 34 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C74 A (TAB... See More ⇒

Detailed specifications: IXTQ60N20L2, IXTQ60N20T, IXTQ62N15P, IXTQ64N25P, IXTQ69N30P, IXTQ69N30PM, IXTQ74N20P, IXTQ75N10P, STP65NF06, IXTQ82N25P, IXTQ86N20T, IXTQ86N25T, IXTQ88N28T, IXTQ88N30P, IXTQ90N15T, IXTQ96N15P, IXTQ96N20P

Keywords - IXTQ76N25T MOSFET specs

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