IXTQ82N25P Datasheet. Specs and Replacement

Type Designator: IXTQ82N25P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 82 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO3P

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IXTQ82N25P datasheet

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IXTQ82N25P

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IXTQ82N25P

IXTK 82N25P VDSS = 250 V PolarHTTM IXTQ 82N25P ID25 = 82 A Power MOSFET IXTT 82N25P RDS(on) 35 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 ... See More ⇒

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 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTQ82N25P

IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V TO-264 (IXTK) ... See More ⇒

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IXTQ82N25P

Advance Technical Infomation IXTQ 80N28T IXTQ 80N28T VDSS = 280 V Trench Gate ID25 = 80 A Power MOSFET RDS(on) = 49 m N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 280 V VDGR TJ = 25 C to 150 C; RGS = 1 M 280 V VGSM 30 V ID25 TC = 25 C80 A G IDRMS External lead cu... See More ⇒

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Detailed specifications: IXTQ60N20T, IXTQ62N15P, IXTQ64N25P, IXTQ69N30P, IXTQ69N30PM, IXTQ74N20P, IXTQ75N10P, IXTQ76N25T, IRF1405, IXTQ86N20T, IXTQ86N25T, IXTQ88N28T, IXTQ88N30P, IXTQ90N15T, IXTQ96N15P, IXTQ96N20P, IXTQ96N25T

Keywords - IXTQ82N25P MOSFET specs

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