All MOSFET. IXTQ88N30P Datasheet

 

IXTQ88N30P Datasheet and Replacement


   Type Designator: IXTQ88N30P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 88 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO3P
 

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IXTQ88N30P Datasheet (PDF)

 ..1. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTQ88N30P

IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)

 ..2. Size:365K  ixys
 ixth88n30p ixtk88n30p ixtq88n30p ixtt88n30p.pdf pdf_icon

IXTQ88N30P

IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)

 9.1. Size:90K  ixys
 ixtq80n28t.pdf pdf_icon

IXTQ88N30P

Advance Technical Infomation IXTQ 80N28TIXTQ 80N28T VDSS = 280 VTrench GateID25 = 80 APower MOSFETRDS(on) = 49 mN-Channel Enhancement ModeFor Plasma Display ApplicationsSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 280 VVDGR TJ = 25C to 150C; RGS = 1 M 280 VVGSM 30 VID25 TC = 25C80 AGIDRMS External lead cu

 9.2. Size:159K  ixys
 ixtt82n25p ixtq82n25p ixtk82n25p.pdf pdf_icon

IXTQ88N30P

VDSS = 250VIXTT82N25PPolarTMID25 = 82AIXTQ82N25PPower MOSFET RDS(on) 38m IXTK82N25PTO-268 (IXTT)N-Channel Enhancement ModeGAvalanche RatedSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 250 VTO-3P( IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Continuous 20 VGVGSM Transient

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Datasheet: IXTQ69N30PM , IXTQ74N20P , IXTQ75N10P , IXTQ76N25T , IXTQ82N25P , IXTQ86N20T , IXTQ86N25T , IXTQ88N28T , IRF1405 , IXTQ90N15T , IXTQ96N15P , IXTQ96N20P , IXTQ96N25T , IXTR16P60P , IXTR170P10P , IXTR200N10P , IXTR20P50P .

History: FSS913AOR | IXFK40N90P | IRF613 | FDC6308P | SWP050R95E8S | SM4506NHKP | FSYA250R

Keywords - IXTQ88N30P MOSFET datasheet

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