IXTQ96N15P Datasheet and Replacement
Type Designator: IXTQ96N15P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 480 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 96 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 150 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TO3P
IXTQ96N15P substitution
IXTQ96N15P Datasheet (PDF)
ixtq96n15p ixtt96n15p.pdf
IXTQ 96N15P VDSS = 150 VPolarHTTMIXTT 96N15P ID25 = 96 APower MOSFET RDS(on) 24 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 150 VVDGR TJ = 25 C to 150 C; RGS = 1 M 150 VVGSS Continuous 20 VVGSM Transient 30 VID25 TC = 25 C96 A GD(TAB)
ixth96n20p ixtt96n20p ixtq96n20p.pdf
IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient
ixth96n20p ixtq96n20p ixtt96n20p.pdf
IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient
Datasheet: IXTQ75N10P , IXTQ76N25T , IXTQ82N25P , IXTQ86N20T , IXTQ86N25T , IXTQ88N28T , IXTQ88N30P , IXTQ90N15T , AON7403 , IXTQ96N20P , IXTQ96N25T , IXTR16P60P , IXTR170P10P , IXTR200N10P , IXTR20P50P , IXTR30N25 , IXTR32P60P .
History: IXTK88N30P | SVS65R280SD4 | AP3A010MT | IXTQ23N60Q | AP04N70BS-H-HF | 2SK1452 | AON6224
Keywords - IXTQ96N15P MOSFET datasheet
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History: IXTK88N30P | SVS65R280SD4 | AP3A010MT | IXTQ23N60Q | AP04N70BS-H-HF | 2SK1452 | AON6224
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