IXTQ96N15P Datasheet. Specs and Replacement

Type Designator: IXTQ96N15P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 480 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 96 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TO3P

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IXTQ96N15P substitution

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IXTQ96N15P datasheet

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IXTQ96N15P

IXTQ 96N15P VDSS = 150 V PolarHTTM IXTT 96N15P ID25 = 96 A Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 M 150 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C96 A G D (TAB) ... See More ⇒

 7.1. Size:198K  ixys
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IXTQ96N15P

IXTH 96N20P VDSS = 200 V PolarHTTM IXTQ 96N20P ID25 = 96 A Power MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 200 V S (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGSS Continous 20 V TO-3P (IXTQ) VGSM Transient ... See More ⇒

 7.2. Size:239K  ixys
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IXTQ96N15P

IXTH 96N20P VDSS = 200 V PolarHTTM IXTQ 96N20P ID25 = 96 A Power MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 200 V S (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGSS Continous 20 V TO-3P (IXTQ) VGSM Transient ... See More ⇒

Detailed specifications: IXTQ75N10P, IXTQ76N25T, IXTQ82N25P, IXTQ86N20T, IXTQ86N25T, IXTQ88N28T, IXTQ88N30P, IXTQ90N15T, IRF9640, IXTQ96N20P, IXTQ96N25T, IXTR16P60P, IXTR170P10P, IXTR200N10P, IXTR20P50P, IXTR30N25, IXTR32P60P

Keywords - IXTQ96N15P MOSFET specs

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