All MOSFET. IXTQ96N25T Datasheet

 

IXTQ96N25T Datasheet and Replacement


   Type Designator: IXTQ96N25T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 96 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 158 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO3P
 

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IXTQ96N25T Datasheet (PDF)

 6.1. Size:198K  ixys
 ixth96n20p ixtt96n20p ixtq96n20p.pdf pdf_icon

IXTQ96N25T

IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient

 6.2. Size:239K  ixys
 ixth96n20p ixtq96n20p ixtt96n20p.pdf pdf_icon

IXTQ96N25T

IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient

 7.1. Size:170K  ixys
 ixtq96n15p ixtt96n15p.pdf pdf_icon

IXTQ96N25T

IXTQ 96N15P VDSS = 150 VPolarHTTMIXTT 96N15P ID25 = 96 APower MOSFET RDS(on) 24 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 150 VVDGR TJ = 25 C to 150 C; RGS = 1 M 150 VVGSS Continuous 20 VVGSM Transient 30 VID25 TC = 25 C96 A GD(TAB)

Datasheet: IXTQ82N25P , IXTQ86N20T , IXTQ86N25T , IXTQ88N28T , IXTQ88N30P , IXTQ90N15T , IXTQ96N15P , IXTQ96N20P , HY1906P , IXTR16P60P , IXTR170P10P , IXTR200N10P , IXTR20P50P , IXTR30N25 , IXTR32P60P , IXTR36P15P , IXTR40P50P .

Keywords - IXTQ96N25T MOSFET datasheet

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