All MOSFET. IXTT20P50P Datasheet

 

IXTT20P50P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTT20P50P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 460 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 20 A

Rise Time (tr): 406 nS

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO268

IXTT20P50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTT20P50P Datasheet (PDF)

5.1. ixtq26n50p ixtt26n50p ixtv26n50p.pdf Size:338K _ixys

IXTT20P50P
IXTT20P50P

IXTQ 26N50P VDSS = 500 V PolarHVTM IXTT 26N50P ID25 = 26 A Power MOSFET ? ? IXTV 26N50P RDS(on) ? 230 m? ? ? ? ? ? ? IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D S D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V TO-268 (IXTT) VGSS Continuos 30 V VGSM Transient 40 V ID25 TC

5.2. ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf Size:230K _ixys

IXTT20P50P
IXTT20P50P

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET ? ? IXTT26N60P RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V TO-3P (IXTQ) VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transient 40 V G D ID25

Datasheet: IXTT140N10P , IXTT16N10D2 , IXTT16N20D2 , IXTT16N50D2 , IXTT16P60P , IXTT170N10P , IXTT1N100 , IXTT20N50D , IRF520 , IXTT24N50Q , IXTT24P20 , IXTT26N50P , IXTT26N60P , IXTT28N50Q , IXTT30N50L , IXTT30N50L2 , IXTT30N50P .

 


IXTT20P50P
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  IXTT20P50P
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IXTT20P50P
  IXTT20P50P
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