All MOSFET. IXTT20P50P Datasheet

 

IXTT20P50P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTT20P50P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 460 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 406 nS

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO268

IXTT20P50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTT20P50P Datasheet (PDF)

5.1. ixth2n170d2 ixtt2n170d2.pdf Size:172K _ixys

IXTT20P50P
IXTT20P50P

Depletion Mode VDSX = 1700V IXTT2N170D2 MOSFETs ID(on) > 2A IXTH2N170D2 ≤ Ω RDS(on) ≤ 6.5Ω ≤ Ω ≤ Ω ≤ Ω N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1700 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1700 V VGSX Continuous ±20 V G VGSM Transient ±30 V D D (Tab) S PD TC = 25°C 568 W G = Gate

5.2. ixtq26n50p ixtt26n50p ixtv26n50p.pdf Size:338K _ixys

IXTT20P50P
IXTT20P50P

IXTQ 26N50P VDSS = 500 V PolarHVTM IXTT 26N50P ID25 = 26 A Power MOSFET ? ? IXTV 26N50P RDS(on) ? 230 m? ? ? ? ? ? ? IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D S D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V TO-268 (IXTT) VGSS Continuos 30 V VGSM Transient 40 V ID25 TC

 5.3. ixth2n300p3hv ixtt2n300p3hv.pdf Size:202K _ixys

IXTT20P50P
IXTT20P50P

Advance Technical Information High Voltage VDSS = 3000V IXTT2N300P3HV Power MOSFET ID25 = 2A IXTH2N300P3HV   RDS(on)    21     TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 3000 V VDGR TJ = 25C to 150C, RGS = 1M 3000 V VGSS Continuous 20 V V

5.4. ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf Size:230K _ixys

IXTT20P50P
IXTT20P50P

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET ? ? IXTT26N60P RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V TO-3P (IXTQ) VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transient 40 V G D ID25

Datasheet: IXTT140N10P , IXTT16N10D2 , IXTT16N20D2 , IXTT16N50D2 , IXTT16P60P , IXTT170N10P , IXTT1N100 , IXTT20N50D , IRF520 , IXTT24N50Q , IXTT24P20 , IXTT26N50P , IXTT26N60P , IXTT28N50Q , IXTT30N50L , IXTT30N50L2 , IXTT30N50P .

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