IXTT30N50L2 Datasheet: MOSFET, N-Ch, 500V, 30A. Full specification with pinout and replacement list

IXTT30N50L2 Datasheet. Specs and Replacement

Type Designator: IXTT30N50L2 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO268

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IXTT30N50L2 substitution

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IXTT30N50L2 datasheet

0.1. Size:142K ixys
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IXTH30N50L2 VDSS = 500V Linear L2TM Power IXTQ30N50L2 ID25 = 30A MOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOA D D D D O D O N-Channel Enhancement Mode TO-247 (IXTH) RGi w w G O O (TAB) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continu... See More ⇒

5.1. Size:336K ixys
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VDSS = 500 V IXTH 30N50P PolarHVTM ID25 = 30 A IXTQ 30N50P Power MOSFET RDS(on) 200 m IXTT 30N50P N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuo... See More ⇒

7.1. Size:352K ixys
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