All MOSFET. IXTT30N50L2 Datasheet

 

IXTT30N50L2 Datasheet and Replacement


   Type Designator: IXTT30N50L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 500 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO268
 

 IXTT30N50L2 substitution

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IXTT30N50L2 Datasheet (PDF)

 0.1. Size:142K  ixys
 ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf pdf_icon

IXTT30N50L2

IXTH30N50L2 VDSS = 500VLinear L2TM PowerIXTQ30N50L2 ID25 = 30AMOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOADDDDO DON-Channel Enhancement ModeTO-247 (IXTH)RGiwwG OO(TAB)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continu

 5.1. Size:336K  ixys
 ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf pdf_icon

IXTT30N50L2

VDSS = 500 VIXTH 30N50PPolarHVTMID25 = 30 AIXTQ 30N50PPower MOSFET RDS(on) 200 m IXTT 30N50PN-Channel Enhancement ModeIXTV 30N50PAvalanche RatedIXTV 30N50PSTO-247 AD (IXTH)(TAB)Symbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo

 7.1. Size:352K  ixys
 ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p.pdf pdf_icon

IXTT30N50L2

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient

 7.2. Size:392K  ixys
 ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p ixtv30n60ps.pdf pdf_icon

IXTT30N50L2

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient

SHOW MORE

Datasheet: IXTT20N50D , IXTT20P50P , IXTT24N50Q , IXTT24P20 , IXTT26N50P , IXTT26N60P , IXTT28N50Q , IXTT30N50L , 7N65 , IXTT30N50P , IXTT30N60L2 , IXTT30N60P , IXTT360N055T2 , IXTT36N50P , IXTT40N50L2 , IXTT440N055T2 , IXTT48P20P .

History: 2SJ109 | TPP60R350C | CEU14G04 | SSF2610E | FTK3439KD | TPCA8027-H | BSC050N10NS5

Keywords - IXTT30N50L2 MOSFET datasheet

 IXTT30N50L2 cross reference
 IXTT30N50L2 equivalent finder
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