All MOSFET. IXTT36N50P Datasheet

 

IXTT36N50P Datasheet and Replacement


   Type Designator: IXTT36N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 400 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO268
 

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IXTT36N50P Datasheet (PDF)

 ..1. Size:361K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p.pdf pdf_icon

IXTT36N50P

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

 ..2. Size:402K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p ixtv36n50ps.pdf pdf_icon

IXTT36N50P

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

 8.1. Size:181K  ixys
 ixth360n055t2 ixtt360n055t2.pdf pdf_icon

IXTT36N50P

Preliminary Technical InformationVDSS = 55VTrenchT2TM PowerIXTH360N055T2ID25 = 360AMOSFET IXTT360N055T2 RDS(on) 2.4m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXTH)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 175C55 V (TAB)SVDGR TJ = 25C to 175C, RGS = 1M 55 VVGSM Transient

 9.1. Size:142K  ixys
 ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf pdf_icon

IXTT36N50P

IXTH30N50L2 VDSS = 500VLinear L2TM PowerIXTQ30N50L2 ID25 = 30AMOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOADDDDO DON-Channel Enhancement ModeTO-247 (IXTH)RGiwwG OO(TAB)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continu

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Datasheet: IXTT26N60P , IXTT28N50Q , IXTT30N50L , IXTT30N50L2 , IXTT30N50P , IXTT30N60L2 , IXTT30N60P , IXTT360N055T2 , K4145 , IXTT40N50L2 , IXTT440N055T2 , IXTT48P20P , IXTT500N04T2 , IXTT50N30 , IXTT50P085 , IXTT50P10 , IXTT52N30P .

History: AFP2309A | HY4004P | IRF7526D1PBF | 2SK2624ALS | MTN2510LE3 | IXTY15P15T | BUK964R2-55B

Keywords - IXTT36N50P MOSFET datasheet

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