IXTT8P50 Datasheet. Specs and Replacement

Type Designator: IXTT8P50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 400 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO268

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IXTT8P50 substitution

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IXTT8P50 datasheet

 ..1. Size:515K  ixys
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IXTT8P50

IXTH 8P50 VDSS = -500 V Standard Power IXTT 8P50 ID25 = -8 A MOSFET RDS(on) = 1.2 P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-268 (IXTT) ID25 TC = 25 C-8 A IDM TC = 25... See More ⇒

 9.1. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTT8P50

IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V TO-264 (IXTK) ... See More ⇒

 9.2. Size:159K  ixys
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IXTT8P50

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 9.3. Size:294K  ixys
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IXTT8P50

IXTK 82N25P VDSS = 250 V PolarHTTM IXTQ 82N25P ID25 = 82 A Power MOSFET IXTT 82N25P RDS(on) 35 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 ... See More ⇒

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Detailed specifications: IXTT74N20P, IXTT75N10, IXTT75N10L2, IXTT75N15, IXTT80N20L, IXTT82N25P, IXTT88N15, IXTT88N30P, AO4407, IXTT90P10P, IXTT96N15P, IXTT96N20P, IXTU01N100D, IXTU02N50D, IXTU05N100, IXTU12N06T, IXTU1N80P

Keywords - IXTT8P50 MOSFET specs

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