IXTU01N100D Datasheet. Specs and Replacement

Type Designator: IXTU01N100D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 80 Ohm

Package: TO251

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IXTU01N100D datasheet

 ..1. Size:94K  ixys
 ixtp01n100d ixtu01n100d ixty01n100d.pdf pdf_icon

IXTU01N100D

IXTP 01N100D VDSS = 1000 V High Voltage MOSFET IXTU 01N100D ID25 = 100 mA N-Channel, Depletion Mode IXTY 01N100D RDS(on) = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25 C to 150 C 1000 V VDGX TJ = 25 C to 150 C 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S IDSS TC = 25 C; TJ = 25 C to... See More ⇒

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IXTU01N100D

IXTU 01N100 VDSS = 1000 V High Voltage MOSFET IXTY 01N100 ID25 = 100mA N-Channel, Enhancement Mode RDS(on) = 80 Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU) 01N100 VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V G VGS Continuous 20 V D D (TAB) S VGSM Transient 30 V ID25 TC = 25 C; TJ = 25 C to 150 C 100 mA IDM... See More ⇒

 7.1. Size:66K  ixys
 ixtu01n80 ixty01n80.pdf pdf_icon

IXTU01N100D

IXTU 01N80 VDSS = 800 V High Voltage MOSFET IXTY 01N80 ID25 = 100mA N-Channel, Enhancement Mode RDS(on) = 50 Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU) 01N100 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V G VGS Continuous 20 V D D (TAB) S VGSM Transient 30 V ID25 TC = 25 C; TJ = 25 C to 150 C 100 mA ID... See More ⇒

 9.1. Size:94K  ixys
 ixtp02n50d ixtu02n50d ixty02n50d.pdf pdf_icon

IXTU01N100D

IXTP 02N50D VDSS = 500 V High Voltage MOSFET IXTU 02N50D ID25 = 200 mA N-Channel, Depletion Mode IXTY 02N50D RDS(on) = 30 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25 C to 150 C 500 V VDGX TJ = 25 C to 150 C 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V G D S IDSS TC = 25 C; TJ = 25 C to 150 C... See More ⇒

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Detailed specifications: IXTT80N20L, IXTT82N25P, IXTT88N15, IXTT88N30P, IXTT8P50, IXTT90P10P, IXTT96N15P, IXTT96N20P, IRF1407, IXTU02N50D, IXTU05N100, IXTU12N06T, IXTU1N80P, IXTU1R4N60P, IXTU2N80P, IXTU4N60P, IXTU5N50P

Keywords - IXTU01N100D MOSFET specs

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