IXTU12N06T PDF and Equivalents Search

 

IXTU12N06T Specs and Replacement


   Type Designator: IXTU12N06T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 30 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO251
 

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IXTU12N06T datasheet

 9.1. Size:161K  ixys
 ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf pdf_icon

IXTU12N06T

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET RDS(on) 14 IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25 C to 150 C 800 V VD... See More ⇒

Detailed specifications: IXTT88N30P , IXTT8P50 , IXTT90P10P , IXTT96N15P , IXTT96N20P , IXTU01N100D , IXTU02N50D , IXTU05N100 , 5N60 , IXTU1N80P , IXTU1R4N60P , IXTU2N80P , IXTU4N60P , IXTU5N50P , IXTV02N250S , IXTV03N400S , IXTV102N20T .

History: IXTR210P10T | APM4301K | TSM6866DCA | 3SK74K | NTD4909N | PMZB290UN | IXTQ480P2

Keywords - IXTU12N06T MOSFET specs

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