IXTV18N60P Datasheet. Specs and Replacement
Type Designator: IXTV18N60P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 360 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 500 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: PLUS220
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IXTV18N60P substitution
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IXTV18N60P datasheet
Detailed specifications: IXTU1R4N60P, IXTU2N80P, IXTU4N60P, IXTU5N50P, IXTV02N250S, IXTV03N400S, IXTV102N20T, IXTV110N25TS, 2N60, IXTV18N60PS, IXTV200N10T, IXTV200N10TS, IXTV22N50P, IXTV22N50PS, IXTV22N60P, IXTV22N60PS, IXTV230N085T
Keywords - IXTV18N60P MOSFET specs
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