All MOSFET. IXTV22N50PS Datasheet

 

IXTV22N50PS Datasheet and Replacement


   Type Designator: IXTV22N50PS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 350 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 50 nC
   tr ⓘ - Rise Time: 400 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: PLUS220SMD
 

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IXTV22N50PS Datasheet (PDF)

 4.1. Size:198K  ixys
 ixth22n50p ixtq22n50p ixtv22n50p.pdf pdf_icon

IXTV22N50PS

IXTH 22N50P VDSS = 500 VPolarHVTMIXTQ 22N50P ID25 = 22 APower MOSFETIXTV 22N50P RDS(on) 270 m N-Channel Enhancement ModeIXTV 22N50PSAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25C to 150C 500 VSVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VTO-3P (IXTQ)VGSM Trans

 7.1. Size:314K  ixys
 ixtq22n60p ixtv22n60p.pdf pdf_icon

IXTV22N50PS

IXTQ 22N60P VDSS = 600 VPolarHVTMIXTV 22N60P ID25 = 22 APower MOSFET IXTV 22N60PS RDS (on) 350 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGS Continuous 30 V GD(TAB)SVGSM Tranisent 40 VID25

 9.1. Size:230K  ixys
 ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf pdf_icon

IXTV22N50PS

IXTH26N60P VDSS = 600 VPolarHVTMIXTQ26N60P ID25 = 26 APower MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement ModeIXTV26N60PAvalanche RatedTO-247 (IXTH)IXTV26N60PSGDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-3P (IXTQ)VDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Tran

 9.2. Size:294K  ixys
 ixtv230n085ts.pdf pdf_icon

IXTV22N50PS

Preliminary Technical InformationVDSS = 85 VIXTV230N085TTrenchMVTMID25 = 230 AIXTV230N085TSPower MOSFET RDS(on) 4.4 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsPLUS220 (IXTV)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VGDD (TAB)S

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Keywords - IXTV22N50PS MOSFET datasheet

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