IXTV22N60P Datasheet. Specs and Replacement

Type Designator: IXTV22N60P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: PLUS220

  📄📄 Copy 

IXTV22N60P substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTV22N60P datasheet

 ..1. Size:314K  ixys
ixtq22n60p ixtv22n60p.pdf pdf_icon

IXTV22N60P

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET IXTV 22N60PS RDS (on) 350 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25 ... See More ⇒

 7.1. Size:198K  ixys
ixth22n50p ixtq22n50p ixtv22n50p.pdf pdf_icon

IXTV22N60P

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) 270 m N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Trans... See More ⇒

 9.1. Size:230K  ixys
ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf pdf_icon

IXTV22N60P

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Continuous 30 V VGSM Tran... See More ⇒

 9.2. Size:294K  ixys
ixtv230n085ts.pdf pdf_icon

IXTV22N60P

Preliminary Technical Information VDSS = 85 V IXTV230N085T TrenchMVTM ID25 = 230 A IXTV230N085TS Power MOSFET RDS(on) 4.4 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V G D D (TAB) S... See More ⇒

Detailed specifications: IXTV102N20T, IXTV110N25TS, IXTV18N60P, IXTV18N60PS, IXTV200N10T, IXTV200N10TS, IXTV22N50P, IXTV22N50PS, STP65NF06, IXTV22N60PS, IXTV230N085T, IXTV230N85TS, IXTV250N075T, IXTV250N075TS, IXTV26N50P, IXTV26N50PS, IXTV26N60P

Keywords - IXTV22N60P MOSFET specs

 IXTV22N60P cross reference

 IXTV22N60P equivalent finder

 IXTV22N60P pdf lookup

 IXTV22N60P substitution

 IXTV22N60P replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.