IXTX20N140 Specs and Replacement
Type Designator: IXTX20N140
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1400 V
|Id| ⓘ - Maximum Drain Current: 20 A
Electrical Characteristics
tr ⓘ - Rise Time: 1100 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: PLUS247
IXTX20N140 substitution
IXTX20N140 datasheet
ixtk20n150 ixtx20n150.pdf
High Voltage Power VDSS = 1500V IXTK20N150 MOSFETs w/ Extended ID25 = 20A IXTX20N150 FBSOA RDS(on) ... See More ⇒
ixtx200n10l2.pdf
isc N-Channel MOSFET Transistor IXTX200N10L2 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V ... See More ⇒
ixtk210p10t ixtx210p10t.pdf
Advance Technical Information TrenchPTM VDSS = - 100V IXTK210P10T Power MOSFETs ID25 = - 210A IXTX210P10T RDS(on) 7.5m trr 200ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C -100 V D S VDGR TJ = 25 C to 150 C, RGS ... See More ⇒
Detailed specifications: IXTV36N50P , IXTV36N50PS , IXTV86N25T , IXTV96N25T , IXTX110N20L2 , IXTX170P10P , IXTX17N120L , IXTX200N10L2 , IRF540 , IXTX22N100L , IXTX24N100 , IXTX32P60P , IXTX40P50P , IXTX46N50L , IXTX550N055T2 , IXTX5N250 , IXTX600N04T2 .
History: FDD10N20LZTM | NCE60NF200F
Keywords - IXTX20N140 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FDD10N20LZTM | NCE60NF200F
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