IXTX20N140 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXTX20N140
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1400 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Qgⓘ - Total Gate Charge: 215 nC
   trⓘ - Rise Time: 1100 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: PLUS247

IXTX20N140 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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