All MOSFET. IXTX22N100L Datasheet

 

IXTX22N100L Datasheet and Replacement


   Type Designator: IXTX22N100L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 700 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1000 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: PLUS247
 

 IXTX22N100L substitution

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IXTX22N100L Datasheet (PDF)

 9.1. Size:129K  ixys
 ixtk20n150 ixtx20n150.pdf pdf_icon

IXTX22N100L

High Voltage PowerVDSS = 1500VIXTK20N150MOSFETs w/ ExtendedID25 = 20AIXTX20N150FBSOARDS(on)

 9.2. Size:179K  ixys
 ixtk210p10t ixtx210p10t.pdf pdf_icon

IXTX22N100L

Advance Technical InformationTrenchPTM VDSS = - 100VIXTK210P10TPower MOSFETs ID25 = - 210AIXTX210P10T RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C -100 V DSVDGR TJ = 25C to 150C, RGS

 9.3. Size:260K  inchange semiconductor
 ixtx200n10l2.pdf pdf_icon

IXTX22N100L

isc N-Channel MOSFET Transistor IXTX200N10L2FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV

Datasheet: IXTV36N50PS , IXTV86N25T , IXTV96N25T , IXTX110N20L2 , IXTX170P10P , IXTX17N120L , IXTX200N10L2 , IXTX20N140 , 50N06 , IXTX24N100 , IXTX32P60P , IXTX40P50P , IXTX46N50L , IXTX550N055T2 , IXTX5N250 , IXTX600N04T2 , IXTX60N50L2 .

History: TPM2601C3 | 7N65L-TQ2-T | LSE55R140GF | RSF014N03 | OSG65R290AF | OSG65R140KSZF | ME50N10

Keywords - IXTX22N100L MOSFET datasheet

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