All MOSFET. IXTX22N100L Datasheet

 

IXTX22N100L MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTX22N100L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 700 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 270 nC

Rise Time (tr): 1000 nS

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: PLUS247

IXTX22N100L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXTX22N100L Datasheet (PDF)

5.1. ixtk20n150 ixtx20n150.pdf Size:129K _ixys

IXTX22N100L
IXTX22N100L

High Voltage Power VDSS = 1500V IXTK20N150 MOSFETs w/ Extended ID25 = 20A IXTX20N150 FBSOA Ω RDS(on) < 1Ω Ω Ω Ω N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V G D VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1500 V S VGSS Continuous ±30 V Tab VGSM Transient ±40 V ID25 TC =

5.2. ixtk210p10t ixtx210p10t.pdf Size:179K _ixys

IXTX22N100L
IXTX22N100L

Advance Technical Information TrenchPTM VDSS = - 100V IXTK210P10T Power MOSFETs ID25 = - 210A IXTX210P10T ≤ Ω RDS(on) ≤ 7.5mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200ns ≤ ≤ ≤ P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C -100 V D S VDGR TJ = 25°C to 150°C, RGS

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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IXTX22N100L
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