IXTX5N250 Specs and Replacement
Type Designator: IXTX5N250
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 960 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 2500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1200 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.8 Ohm
Package: PLUS247
IXTX5N250 substitution
IXTX5N250 datasheet
No PDF!
Detailed specifications: IXTX200N10L2 , IXTX20N140 , IXTX22N100L , IXTX24N100 , IXTX32P60P , IXTX40P50P , IXTX46N50L , IXTX550N055T2 , IRFB4110 , IXTX600N04T2 , IXTX60N50L2 , IXTX8N150L , IXTX90N25L2 , IXTX90P20P , IXTY01N100 , IXTY01N100D , IXTY01N80 .
Keywords - IXTX5N250 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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