All MOSFET. IXTX90N25L2 Datasheet

 

IXTX90N25L2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTX90N25L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 960 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 640 nC
   trⓘ - Rise Time: 266 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: PLUS247

 IXTX90N25L2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTX90N25L2 Datasheet (PDF)

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Datasheet: IXTX32P60P , IXTX40P50P , IXTX46N50L , IXTX550N055T2 , IXTX5N250 , IXTX600N04T2 , IXTX60N50L2 , IXTX8N150L , IRFB4227 , IXTX90P20P , IXTY01N100 , IXTY01N100D , IXTY01N80 , IXTY02N120P , IXTY02N50D , IXTY05N100 , IXTY08N100D2 .

 

 
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