IXTX90N25L2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTX90N25L2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 960 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 640 nC
trⓘ - Rise Time: 266 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: PLUS247
IXTX90N25L2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTX90N25L2 Datasheet (PDF)
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Datasheet: IXTX32P60P , IXTX40P50P , IXTX46N50L , IXTX550N055T2 , IXTX5N250 , IXTX600N04T2 , IXTX60N50L2 , IXTX8N150L , IRFB4227 , IXTX90P20P , IXTY01N100 , IXTY01N100D , IXTY01N80 , IXTY02N120P , IXTY02N50D , IXTY05N100 , IXTY08N100D2 .
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