IXTY08N100D2 PDF and Equivalents Search

 

IXTY08N100D2 Specs and Replacement


   Type Designator: IXTY08N100D2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 21 Ohm
   Package: TO252
 

 IXTY08N100D2 substitution

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IXTY08N100D2 datasheet

 ..1. Size:270K  ixys
ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf pdf_icon

IXTY08N100D2

Depletion Mode VDSX = 1000V IXTY08N100D2 MOSFET ID(on) > 800mA IXTA08N100D2 RDS(on) 21 IXTP08N100D2 N-Channel D TO-252 (IXTY) G S G D (Tab) S TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings G VDSX TJ = 25 C to 150 C 1000 V S D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25 C60 W TJ ... See More ⇒

 0.1. Size:177K  ixys
ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf pdf_icon

IXTY08N100D2

Preliminary Technical Information Depletion Mode VDSX = 1000V IXTY08N100D2 MOSFET ID(on) > 800mA IXTA08N100D2 RDS(on) 21 IXTP08N100D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 1000 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C60 W D (Tab) TJ -... See More ⇒

 7.1. Size:177K  ixys
ixty08n50d2-ixta08n50d2-ixtp08n50d2.pdf pdf_icon

IXTY08N100D2

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY08N50D2 MOSFET ID(on) > 800mA IXTA08N50D2 RDS(on) 4.6 IXTP08N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C60 W D (Tab) TJ - 55 ... See More ⇒

 9.1. Size:94K  ixys
ixtp01n100d ixtu01n100d ixty01n100d.pdf pdf_icon

IXTY08N100D2

IXTP 01N100D VDSS = 1000 V High Voltage MOSFET IXTU 01N100D ID25 = 100 mA N-Channel, Depletion Mode IXTY 01N100D RDS(on) = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25 C to 150 C 1000 V VDGX TJ = 25 C to 150 C 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S IDSS TC = 25 C; TJ = 25 C to... See More ⇒

Detailed specifications: IXTX90N25L2 , IXTX90P20P , IXTY01N100 , IXTY01N100D , IXTY01N80 , IXTY02N120P , IXTY02N50D , IXTY05N100 , 7N65 , IXTY08N100P , IXTY08N50D2 , IXTY10P15T , IXTY12N06T , IXTY15P15T , IXTY18P10T , IXTY1N100P , IXTY1N80 .

History: HGP049N10S | STB21N65M5 | 8N60G-T2Q-T | KRF7105 | IXTY08N50D2 | STS2621 | SWP058R72E7T

Keywords - IXTY08N100D2 MOSFET specs

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