All MOSFET. IXTY08N100P Datasheet

 

IXTY08N100P Datasheet and Replacement


   Type Designator: IXTY08N100P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 750 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
   Package: TO252
      - MOSFET Cross-Reference Search

 

IXTY08N100P Datasheet (PDF)

 4.1. Size:177K  ixys
 ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf pdf_icon

IXTY08N100P

Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ -

 4.2. Size:270K  ixys
 ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf pdf_icon

IXTY08N100P

Depletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelDTO-252 (IXTY)GSGD (Tab)STO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSX TJ = 25C to 150C 1000 VSD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C60 WTJ

 7.1. Size:177K  ixys
 ixty08n50d2-ixta08n50d2-ixtp08n50d2.pdf pdf_icon

IXTY08N100P

Preliminary Technical InformationDepletion Mode VDSX = 500VIXTY08N50D2MOSFET ID(on) > 800mAIXTA08N50D2 RDS(on) 4.6 IXTP08N50D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ - 55

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Keywords - IXTY08N100P MOSFET datasheet

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