IXTY18P10T PDF and Equivalents Search

 

IXTY18P10T Specs and Replacement


   Type Designator: IXTY18P10T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 62 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO252
 

 IXTY18P10T substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXTY18P10T datasheet

 9.1. Size:91K  ixys
ixtp1r6n50p ixty1r6n50p.pdf pdf_icon

IXTY18P10T

IXTP 1R6N50P VDSS = 500 V PolarHVTM IXTY 1R6N50P ID25 = 1.6 A Power MOSFET RDS(on) 6.5 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V G (TAB) D VGSM Transient 40 V S ID25 TC = 25 C 1.6 A IDM... See More ⇒

 9.2. Size:123K  ixys
ixty1r4n120p.pdf pdf_icon

IXTY18P10T

PolarTM VDSS = 1200V IXTY1R4N120P Power MOSFETs ID25 = 1.4A IXTA1R4N120P RDS(on) 13 IXTP1R4N120P TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1200 V G VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V S VGSS Contin... See More ⇒

 9.3. Size:60K  ixys
ixta1n80 ixtp1n80 ixty1n80.pdf pdf_icon

IXTY18P10T

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode RDS(on) = 11 Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 T... See More ⇒

 9.4. Size:179K  ixys
ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2.pdf pdf_icon

IXTY18P10T

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY1R6N50D2 MOSFET ID(on) > 1.6A IXTA1R6N50D2 RDS(on) 2.3 IXTP1R6N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C 100 W D (Tab) TJ -... See More ⇒

Detailed specifications: IXTY02N50D , IXTY05N100 , IXTY08N100D2 , IXTY08N100P , IXTY08N50D2 , IXTY10P15T , IXTY12N06T , IXTY15P15T , STP75NF75 , IXTY1N100P , IXTY1N80 , IXTY1N80P , IXTY1R4N100P , IXTY1R4N60P , IXTY1R6N100D2 , IXTY1R6N50D2 , IXTY1R6N50P .

History: STU3N80K5 | HGP037N10T | HGP028NE6A | TSM9NB50CI | 2SK2556 | SDF054JAB-D | AM90N03-08P

Keywords - IXTY18P10T MOSFET specs

 IXTY18P10T cross reference
 IXTY18P10T equivalent finder
 IXTY18P10T pdf lookup
 IXTY18P10T substitution
 IXTY18P10T replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.