IXTY1N80P PDF and Equivalents Search

 

IXTY1N80P Specs and Replacement


   Type Designator: IXTY1N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 700 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: TO252
 

 IXTY1N80P substitution

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IXTY1N80P datasheet

 ..1. Size:161K  ixys
ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf pdf_icon

IXTY1N80P

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET RDS(on) 14 IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25 C to 150 C 800 V VD... See More ⇒

 6.1. Size:60K  ixys
ixta1n80 ixtp1n80 ixty1n80.pdf pdf_icon

IXTY1N80P

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode RDS(on) = 11 Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 T... See More ⇒

 8.1. Size:123K  ixys
ixty1n120p.pdf pdf_icon

IXTY1N80P

PolarTM VDSS = 1200V IXTY1N120P Power MOSFETs ID25 = 1A IXTA1N120P RDS(on) 20 IXTP1N120P TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1200 V G VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V S VGSS Continuous 2... See More ⇒

 9.1. Size:91K  ixys
ixtp1r6n50p ixty1r6n50p.pdf pdf_icon

IXTY1N80P

IXTP 1R6N50P VDSS = 500 V PolarHVTM IXTY 1R6N50P ID25 = 1.6 A Power MOSFET RDS(on) 6.5 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V G (TAB) D VGSM Transient 40 V S ID25 TC = 25 C 1.6 A IDM... See More ⇒

Detailed specifications: IXTY08N100P , IXTY08N50D2 , IXTY10P15T , IXTY12N06T , IXTY15P15T , IXTY18P10T , IXTY1N100P , IXTY1N80 , IRF4905 , IXTY1R4N100P , IXTY1R4N60P , IXTY1R6N100D2 , IXTY1R6N50D2 , IXTY1R6N50P , IXTY26P10T , IXTY2N100P , IXTY2N60P .

History: HGD058N08SL | SDF240

Keywords - IXTY1N80P MOSFET specs

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