IXTY1R6N50P PDF and Equivalents Search

 

IXTY1R6N50P Specs and Replacement


   Type Designator: IXTY1R6N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 400 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO252AA
 

 IXTY1R6N50P substitution

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IXTY1R6N50P datasheet

 ..1. Size:91K  ixys
ixtp1r6n50p ixty1r6n50p.pdf pdf_icon

IXTY1R6N50P

IXTP 1R6N50P VDSS = 500 V PolarHVTM IXTY 1R6N50P ID25 = 1.6 A Power MOSFET RDS(on) 6.5 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V G (TAB) D VGSM Transient 40 V S ID25 TC = 25 C 1.6 A IDM... See More ⇒

 4.1. Size:179K  ixys
ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2.pdf pdf_icon

IXTY1R6N50P

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY1R6N50D2 MOSFET ID(on) > 1.6A IXTA1R6N50D2 RDS(on) 2.3 IXTP1R6N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C 100 W D (Tab) TJ -... See More ⇒

 8.1. Size:123K  ixys
ixty1r4n120p.pdf pdf_icon

IXTY1R6N50P

PolarTM VDSS = 1200V IXTY1R4N120P Power MOSFETs ID25 = 1.4A IXTA1R4N120P RDS(on) 13 IXTP1R4N120P TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1200 V G VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V S VGSS Contin... See More ⇒

 9.1. Size:60K  ixys
ixta1n80 ixtp1n80 ixty1n80.pdf pdf_icon

IXTY1R6N50P

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode RDS(on) = 11 Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 T... See More ⇒

Detailed specifications: IXTY18P10T , IXTY1N100P , IXTY1N80 , IXTY1N80P , IXTY1R4N100P , IXTY1R4N60P , IXTY1R6N100D2 , IXTY1R6N50D2 , 4435 , IXTY26P10T , IXTY2N100P , IXTY2N60P , IXTY2N80P , IXTY2R4N50P , IXTY32P05T , IXTY3N50P , IXTY3N60P .

History: HGD080N10AL | CM10N60

Keywords - IXTY1R6N50P MOSFET specs

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