IXTY1R6N50P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTY1R6N50P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
|Id|ⓘ - Maximum Drain Current: 1.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.9 nC
trⓘ - Rise Time: 400 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO252AA
IXTY1R6N50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTY1R6N50P Datasheet (PDF)
ixtp1r6n50p ixty1r6n50p.pdf
IXTP 1R6N50P VDSS = 500 VPolarHVTMIXTY 1R6N50P ID25 = 1.6 APower MOSFET RDS(on) 6.5 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VG(TAB)DVGSM Transient 40 VSID25 TC = 25C 1.6 AIDM
ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2.pdf
Preliminary Technical InformationDepletion Mode VDSX = 500VIXTY1R6N50D2MOSFET ID(on) > 1.6AIXTA1R6N50D2 RDS(on) 2.3 IXTP1R6N50D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C 100 WD (Tab)TJ -
ixty1r4n120p.pdf
PolarTM VDSS = 1200VIXTY1R4N120PPower MOSFETs ID25 = 1.4AIXTA1R4N120P RDS(on) 13 IXTP1R4N120PTO-252 (IXTY)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSD (Tab)TO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VGVDGR TJ = 25C to 150C, RGS = 1M 1200 VSVGSS Contin
ixta1n80 ixtp1n80 ixty1n80.pdf
IXTA 1N80VDSS = 800 VHigh Voltage MOSFETIXTP 1N80ID25 = 750 mAIXTY 1N80N-Channel Enhancement ModeRDS(on) = 11 Avalanche Energy RatedPreliminary DataSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VGDSVGSM Transient 30 VID25 T
ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf
Preliminary Technical InformationVDSS = 800VIXTA1N80PPolarTM PowerID25 = 1AIXTP1N80PMOSFET RDS(on) 14 IXTU1N80PIXTY1N80PN-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU)GG(TAB)(TAB)(TAB)S G DDSSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 150C 800 VVD
ixty1n120p.pdf
PolarTM VDSS = 1200VIXTY1N120PPower MOSFETs ID25 = 1AIXTA1N120P RDS(on) 20 IXTP1N120PTO-252 (IXTY)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSD (Tab)TO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VGVDGR TJ = 25C to 150C, RGS = 1M 1200 VSVGSS Continuous 2
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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