IXTY50N085T PDF and Equivalents Search

 

IXTY50N085T Specs and Replacement

Type Designator: IXTY50N085T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO252AA

IXTY50N085T substitution

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IXTY50N085T datasheet

 ..1. Size:171K  ixys
 ixtp50n085t ixty50n085t.pdf pdf_icon

IXTY50N085T

Preliminary Technical Information IXTP50N085T VDSS = 85 V TrenchMVTM IXTY50N085T ID25 = 50 A Power MOSFET RDS(on) 23 m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V... See More ⇒

 9.1. Size:169K  ixys
 ixtp55n075t ixty55n075t.pdf pdf_icon

IXTY50N085T

Preliminary Technical Information IXTP55N075T VDSS = 75 V TrenchMVTM IXTY55N075T ID25 = 55 A Power MOSFET RDS(on) 19.5 m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V ... See More ⇒

Detailed specifications: IXTY2N80P , IXTY2R4N50P , IXTY32P05T , IXTY3N50P , IXTY3N60P , IXTY44N10T , IXTY48P05T , IXTY4N60P , CS150N03A8 , IXTY55N075T , IXTY5N50P , IXTY64N055T , IXTZ550N055T2 , IXUC160N075 , IXUV170N075 , IXUV170N075S , LKK47-06C5 .

History: AP3P3R0MT

Keywords - IXTY50N085T MOSFET specs

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