BLA1011-200R MOSFET. Datasheet pdf. Equivalent
Type Designator: BLA1011-200R
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 36 V
|Id|ⓘ - Maximum Drain Current: 45 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT502A
BLA1011-200R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLA1011-200R Datasheet (PDF)
bla1011-200 n 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D379BLA1011-200Avionics LDMOS transistorPreliminary specification 2000 Aug 02Philips Semiconductors Preliminary specificationAvionics LDMOS transistor BLA1011-200FEATURES PINNING - SOT502A High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Source on mounting base elimin
bla1011-200 bla1011s-200.pdf
BLA1011-200; BLA1011S-200Avionics LDMOS transistorRev. 08 26 October 2005 Product data sheet1. Product profile1.1 General description200 W LDMOS avionics power transistor for transmitter applications at frequencies from1030 MHz to 1090 MHz.Table 1: Typical performanceRF performance at Th = 25 C in a common source class-AB test circuit; IDq = 150 mA; typicalvalues.Mode
bla1011-2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D438BLA1011-2Avionics LDMOS transistorProduct specification 2003 Nov 19Supersedes data of 2002 Oct 02Philips Semiconductors Product specificationAvionics LDMOS transistor BLA1011-2FEATURES PINNING - SOT538A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base el
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