BLF145
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF145
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75
Ohm
Package: SOT123A
BLF145
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF145
Datasheet (PDF)
..1. Size:279K philips
blf145 n.pdf
BLF145HF power MOS transistorRev. 04 5 January 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http://w
..2. Size:72K philips
blf145.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLF145HF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationHF power MOS transistor BLF145FEATURES PIN CONFIGURATION High power gaink, halfpage Low noise figure1 4 Good thermal stability Withstands full load mismatch.dDESCRIPTIONgSilicon N-channel enhancementsMBB
9.1. Size:275K philips
blf147 n.pdf
BLF147VHF power MOS transistorRev. 06 5 December 2006 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http:/
9.2. Size:68K philips
blf147.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLF147VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF147FEATURES PIN CONFIGURATION High power gain Low intermodulation distortionook, halfpage43 Easy power control Good thermal stability Withstands full load mismatch.dDESCRIPTION
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