BLF244 Datasheet and Replacement

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF244VHF power MOS transistorProduct specification 2003 Oct 13Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationVHF power MOS transistor BLF244FEATURES PIN CONFIGURATION High power gain Low noise figurehandbook, halfpage Easy power control1 4 Good thermal stabilityd Withstands full

DISCRETE SEMICONDUCTORSDATA SHEETBLF244VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF244FEATURES PIN CONFIGURATION High power gain Low noise figure Easy power controlk, halfpage Good thermal stability1 4 Withstands full load mismatch Gold metallization ensures

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF242HF-VHF power MOS transistorProduct specification 2003 Oct 13Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationHF-VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gain Low noisehandbook, halfpage Easy power control1 4 Good thermal stability Withstands full load

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D075BLF246BVHF push-pull power MOStransistorProduct specification 2003 Aug 04Supersedes data of 2001 Oct 10Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF246BFEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability2 4 6 8handbook, halfpage

DISCRETE SEMICONDUCTORSDATA SHEETBLF246VHF power MOS transistor1996 Oct 21Product specificationSupersedes data of September 1992Philips Semiconductors Product specificationVHF power MOS transistor BLF246FEATURES PINNING - SOT121 High power gainPIN SYMBOL DESCRIPTION Low noise figure1 d drain Easy power control2 s source Good thermal stability3 g ga

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF245VHF power MOS transistorProduct specification 2003 Sep 02Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationVHF power MOS transistor BLF245FEATURES PIN CONFIGURATION High power gainlfpage Low noise figure1 4 Easy power control Good thermal stabilityd Withstands full load mismatc

DISCRETE SEMICONDUCTORSDATA SHEETM3D096BLF245BVHF push-pull power MOStransistorProduct specification 2000 Oct 17Supersedes data of 1998 Jan 08Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF245BFEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 4fpage Gold metallization ensures d2

DISCRETE SEMICONDUCTORSDATA SHEETBLF247BVHF push-pull power MOStransistorAugust 1994Product specificationPhilips SemiconductorsPhilips Semiconductors Product specificationVHF push-pull power MOS transistor BLF247BFEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 2 Withstands full load mismatch.dgsAPPLICATIONS

DISCRETE SEMICONDUCTORSDATA SHEETBLF245VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF245FEATURES PIN CONFIGURATION High power gainlfpage Low noise figure1 4 Easy power control Good thermal stabilityd Withstands full load mismatch.gsMBB072DESCRIPTIONSilic

DISCRETE SEMICONDUCTORSDATA SHEETBLF242HF/VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationHF/VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gainhalfpage Low noise1 4 Easy power control Good thermal stability Withstands full load mismatchd Gold metallization ensures

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF248VHF push-pull power MOStransistorProduct specification 2003 Sep 02Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF248FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2halfpage Gold metallization ensures

DISCRETE SEMICONDUCTORSDATA SHEETBLF248VHF push-pull power MOStransistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF push-pull power MOS transistor BLF248FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 2 Gold metallization ensuresd2halfpageexcellent reliability.g2sg1

DISCRETE SEMICONDUCTORSDATA SHEETM3D060BLF246VHF power MOS transistorProduct specification 2003 Aug 05Supersedes data of 1996 Oct 21Philips Semiconductors Product specificationVHF power MOS transistor BLF246FEATURES PINNING - SOT121B High power gainPIN DESCRIPTION Low noise figure1 drain Easy power control2 source Good thermal stability3 gate

BLF2425M7L250P; BLF2425M7LS250PPower LDMOS transistorRev. 4 12 July 2013 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high perfor