BLF642 Datasheet and Replacement
Type Designator: BLF642
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 32 V
|Id| ⓘ - Maximum Drain Current: 9 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT467C
BLF642 substitution
BLF642 Datasheet (PDF)
blf642.pdf

BLF642Broadband power LDMOS transistorRev. 2 22 July 2011 Product data sheet1. Product profile1.1 General descriptionA 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications
blf647.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D392BLF647UHF power LDMOS transistorProduct specification 2001 Nov 27Supersedes data of 2001 Aug 02Philips Semiconductors Product specificationUHF power LDMOS transistor BLF647FEATURES PINNING - SOT540A High power gainPIN DESCRIPTION Easy power control1 drain 1 Excellent ruggedness2 drain 2 Source on underside elimi
blf645.pdf

BLF645Broadband power LDMOS transistorRev. 01 27 January 2010 Product data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital
Datasheet: BLF546 , BLF548 , BLF571 , BLF573 , BLF573S , BLF574 , BLF578 , BLF578XR , STP65NF06 , BLF645 , BLF647 , BLF6G10-135RN , BLF6G10-160RN , BLF6G10-200RN , BLF6G10-45 , BLF6G10L-260PRN , BLF6G10L-40BRN .
Keywords - BLF642 MOSFET datasheet
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