All MOSFET. BLF6G10-45 Datasheet

 

BLF6G10-45 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLF6G10-45
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SOT608A

 BLF6G10-45 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF6G10-45 Datasheet (PDF)

 ..1. Size:169K  nxp
 blf6g10-45.pdf

BLF6G10-45 BLF6G10-45

BLF6G10-45Power LDMOS transistorRev. 3 11 March 2013 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MHz)

 6.1. Size:154K  philips
 blf6g10-160rn blf6g10ls-160rn.pdf

BLF6G10-45 BLF6G10-45

BLF6G10-160RN; BLF6G10LS-160RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

 6.2. Size:145K  philips
 blf6g10-135rn blf6g10ls-135rn.pdf

BLF6G10-45 BLF6G10-45

BLF6G10-135RN; BLF6G10LS-135RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

 6.3. Size:161K  philips
 blf6g10-200rn blf6g10ls-200rn.pdf

BLF6G10-45 BLF6G10-45

BLF6G10-200RN; BLF6G10LS-200RNPower LDMOS transistorRev. 02 21 January 2010 Product data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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