BLF6G10L-40BRN Datasheet. Specs and Replacement

Type Designator: BLF6G10L-40BRN  📄📄 

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 11 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT1112A

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BLF6G10L-40BRN substitution

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BLF6G10L-40BRN datasheet

 ..1. Size:272K  nxp
 blf6g10l-40brn.pdf pdf_icon

BLF6G10L-40BRN

BLF6G10L-40BRN Power LDMOS transistor Rev. 3 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (V)... See More ⇒

 5.1. Size:345K  philips
 blf6g10l-260prn ls-260prn.pdf pdf_icon

BLF6G10L-40BRN

BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) ... See More ⇒

 6.1. Size:154K  philips
 blf6g10-160rn blf6g10ls-160rn.pdf pdf_icon

BLF6G10L-40BRN

BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G... See More ⇒

 6.2. Size:145K  philips
 blf6g10-135rn blf6g10ls-135rn.pdf pdf_icon

BLF6G10L-40BRN

BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G... See More ⇒

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Detailed specifications: BLF642, BLF645, BLF647, BLF6G10-135RN, BLF6G10-160RN, BLF6G10-200RN, BLF6G10-45, BLF6G10L-260PRN, 3401, BLF6G10LS-135RN, BLF6G10LS-160RN, BLF6G10LS-200RN, BLF6G10LS-260PRN, BLF6G10S-45, BLF6G13L-250P, BLF6G13LS-250P, BLF6G15L-250PBRN

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