BLF6G20-230PRN MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF6G20-230PRN
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 30 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT539A
BLF6G20-230PRN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF6G20-230PRN Datasheet (PDF)
blf6g20-230prn blf6g20s-230prn.pdf
BLF6G20-230PRN; BLF6G20S-230PRNPower LDMOS transistorRev. 02 9 February 2010 Product data sheet1. Product profile1.1 General description230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS
blf6g20-75 blf6g20ls-75.pdf
BLF6G20-75; BLF6G20LS-75Power LDMOS transistorRev. 02 9 February 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp
blf6g20-45 blf6g20s-45.pdf
BLF6G20-45; BLF6G20S-45Power LDMOS transistorRev. 02 25 August 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D
blf6g20-40.pdf
BLF6G20-40Power LDMOS transistorRev. 01 19 January 2009 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MHz)
blf6g20-180pn.pdf
BLF6G20-180PNPower LDMOS transistorRev. 03 30 March 2009 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MH
blf6g20-180rn blf20ls-180rn.pdf
BLF6G20-180RN;BLF6G20LS-180RNPower LDMOS transistorRev. 01 17 November 2008 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G
blf6g20-110 blf6g20ls-110.pdf
BLF6G20-110; BLF6G20LS-110Power LDMOS transistorRev. 03 13 January 2009 Product data sheet1. Product profile1.1 General description110 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) G
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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