BLF6G20-75 LDMOS PDF: N-Ch, 28V, 18A. Full specification with pinout and replacement list

BLF6G20-75 PDF Specs and Replacement

   Type Designator: BLF6G20-75
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id| ⓘ - Maximum Drain Current: 18 A

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT502A

BLF6G20-75 substitution

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BLF6G20-75 PDF Specs

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BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 02 25 August 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D... See More ⇒

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BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS ... See More ⇒

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BLF6G20-40 Power LDMOS transistor Rev. 01 19 January 2009 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz)... See More ⇒