BLF6G22LS-100 PDF and Equivalents Search

 

BLF6G22LS-100 Specs and Replacement

Type Designator: BLF6G22LS-100

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 29 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT502B

BLF6G22LS-100 substitution

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BLF6G22LS-100 datasheet

 ..1. Size:276K  nxp
blf6g22ls-100.pdf pdf_icon

BLF6G22LS-100

BLF6G22LS-100 Power LDMOS transistor Rev. 3 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A... See More ⇒

 3.1. Size:150K  philips
blf6g22-180pn blf6g22ls-180pn.pdf pdf_icon

BLF6G22LS-100

BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(A... See More ⇒

 3.2. Size:80K  nxp
blf6g22ls-130.pdf pdf_icon

BLF6G22LS-100

BLF6G22LS-130 Power LDMOS transistor Rev. 01 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR ... See More ⇒

 4.1. Size:135K  nxp
blf6g22ls-75.pdf pdf_icon

BLF6G22LS-100

BLF6G22LS-75 Power LDMOS transistor Rev. 02 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR ... See More ⇒

Detailed specifications: BLF6G20S-230PRN , BLF6G20S-45 , BLF6G21-10G , BLF6G22-180PN , BLF6G22-180RN , BLF6G22-45 , BLF6G22L-40BN , BLF6G22L-40P , P55NF06 , BLF6G22LS-130 , BLF6G22LS-180PN , BLF6G22LS-180RN , BLF6G22LS-40P , BLF6G22LS-75 , BLF6G22S-45 , BLF6G27-10 , BLF6G27-100 .

History: IRFP254A

Keywords - BLF6G22LS-100 MOSFET specs

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