BLF6G22LS-100 LDMOS Datasheet: N-Ch, 28V, 29A. Full specification with pinout and replacement list

BLF6G22LS-100 Specs and Replacement

   Type Designator: BLF6G22LS-100
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id| ⓘ - Maximum Drain Current: 29 A

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT502B

BLF6G22LS-100 substitution

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BLF6G22LS-100 datasheet

..1. Size:276K nxp
blf6g22ls-100.pdf pdf_icon

BLF6G22LS-100 Power LDMOS transistor Rev. 3 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A... See More ⇒

3.1. Size:150K philips
blf6g22-180pn blf6g22ls-180pn.pdf pdf_icon

BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(A... See More ⇒

3.2. Size:80K nxp
blf6g22ls-130.pdf pdf_icon

BLF6G22LS-130 Power LDMOS transistor Rev. 01 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR ... See More ⇒

4.1. Size:135K nxp
blf6g22ls-75.pdf pdf_icon

BLF6G22LS-75 Power LDMOS transistor Rev. 02 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR ... See More ⇒

Detailed specifications: BLF6G20S-230PRN , BLF6G20S-45 , BLF6G21-10G , BLF6G22-180PN , BLF6G22-180RN , BLF6G22-45 , BLF6G22L-40BN , BLF6G22L-40P , P55NF06 , BLF6G22LS-130 , BLF6G22LS-180PN , BLF6G22LS-180RN , BLF6G22LS-40P , BLF6G22LS-75 , BLF6G22S-45 , BLF6G27-10 , BLF6G27-100 .