BLF6G22LS-180RN Specs and Replacement
Type Designator: BLF6G22LS-180RN
Type of Transistor: LDMOS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 45 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT502B
BLF6G22LS-180RN substitution
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BLF6G22LS-180RN datasheet
blf6g22-180pn blf6g22ls-180pn.pdf
BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(A... See More ⇒
blf6g22ls-130.pdf
BLF6G22LS-130 Power LDMOS transistor Rev. 01 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR ... See More ⇒
blf6g22ls-100.pdf
BLF6G22LS-100 Power LDMOS transistor Rev. 3 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A... See More ⇒
Detailed specifications: BLF6G22-180PN, BLF6G22-180RN, BLF6G22-45, BLF6G22L-40BN, BLF6G22L-40P, BLF6G22LS-100, BLF6G22LS-130, BLF6G22LS-180PN, IRFP250N, BLF6G22LS-40P, BLF6G22LS-75, BLF6G22S-45, BLF6G27-10, BLF6G27-100, BLF6G27-10G, BLF6G27-135, BLF6G27-45
Keywords - BLF6G22LS-180RN MOSFET specs
BLF6G22LS-180RN cross reference
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BLF6G22LS-180RN replacement
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