All MOSFET. BLF6G27-75 Datasheet

 

BLF6G27-75 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLF6G27-75
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT502A

 BLF6G27-75 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF6G27-75 Datasheet (PDF)

 ..1. Size:277K  philips
blf6g27-75 6g27ls-75.pdf

BLF6G27-75
BLF6G27-75

BLF6G27-75; BLF6G27LS-75WiMAX power LDMOS transistorRev. 01 22 October 2009 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHzto 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(M) Gp D

 6.1. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdf

BLF6G27-75
BLF6G27-75

BLF6G27-100; BLF6G27LS-100WiMAX power LDMOS transistorRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D

 6.2. Size:124K  philips
blf6g27-45 blf6g27s-45.pdf

BLF6G27-75
BLF6G27-75

BLF6G27-45; BLF6G27S-45WiMAX power LDMOS transistorRev. 03 15 December 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR8

 6.3. Size:92K  philips
blf6g27-135 blf6g27ls-135.pdf

BLF6G27-75
BLF6G27-75

BLF6G27-135; BLF6G27LS-135WiMAX power LDMOS transistorRev. 02 26 May 2008 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(p)

 6.4. Size:276K  nxp
blf6g27-10 blf6g27-10g.pdf

BLF6G27-75
BLF6G27-75

BLF6G27-10; BLF6G27-10GWiMAX power LDMOS transistorRev. 4 16 December 2014 Product data sheet1. Product profile1.1 General description10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NDB7060L

 

 
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