All MOSFET. BLF6G27L-50BN Datasheet

 

BLF6G27L-50BN Datasheet and Replacement


   Type Designator: BLF6G27L-50BN
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT1112A
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BLF6G27L-50BN Datasheet (PDF)

 ..1. Size:218K  philips
blf6g27l-50bn blf6g27ls-50bn.pdf pdf_icon

BLF6G27L-50BN

BLF6G27L-50BN; BLF6G27LS-50BNPower LDMOS transistorRev. 2 7 April 2011 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(

 5.1. Size:251K  nxp
blf6g27l-40p 27ls-40p 27ls-40pg.pdf pdf_icon

BLF6G27L-50BN

BLF6G27L-40P; BLF6G27LS-40P(G)Power LDMOS transistorRev. 3 14 January 2015 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source

 6.1. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdf pdf_icon

BLF6G27L-50BN

BLF6G27-100; BLF6G27LS-100WiMAX power LDMOS transistorRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D

 6.2. Size:92K  philips
blf6g27-135 blf6g27ls-135.pdf pdf_icon

BLF6G27L-50BN

BLF6G27-135; BLF6G27LS-135WiMAX power LDMOS transistorRev. 02 26 May 2008 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(p)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - BLF6G27L-50BN MOSFET datasheet

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