BLF6G27L-50BN PDF and Equivalents Search

 

BLF6G27L-50BN Specs and Replacement

Type Designator: BLF6G27L-50BN

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 12 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT1112A

BLF6G27L-50BN substitution

- MOSFET ⓘ Cross-Reference Search

 

BLF6G27L-50BN datasheet

 ..1. Size:218K  philips
blf6g27l-50bn blf6g27ls-50bn.pdf pdf_icon

BLF6G27L-50BN

BLF6G27L-50BN; BLF6G27LS-50BN Power LDMOS transistor Rev. 2 7 April 2011 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(... See More ⇒

 5.1. Size:251K  nxp
blf6g27l-40p 27ls-40p 27ls-40pg.pdf pdf_icon

BLF6G27L-50BN

BLF6G27L-40P; BLF6G27LS-40P(G) Power LDMOS transistor Rev. 3 14 January 2015 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source ... See More ⇒

 6.1. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdf pdf_icon

BLF6G27L-50BN

BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D... See More ⇒

 6.2. Size:92K  philips
blf6g27-135 blf6g27ls-135.pdf pdf_icon

BLF6G27L-50BN

BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p) ... See More ⇒

Detailed specifications: BLF6G22S-45, BLF6G27-10, BLF6G27-100, BLF6G27-10G, BLF6G27-135, BLF6G27-45, BLF6G27-75, BLF6G27L-40P, K3569, BLF6G27LS-100, BLF6G27LS-135, BLF6G27LS-40P, BLF6G27LS-50BN, BLF6G27LS-75, BLF6G27S-45, BLF6G38-10, BLF6G38-100

Keywords - BLF6G27L-50BN MOSFET specs

 BLF6G27L-50BN cross reference

 BLF6G27L-50BN equivalent finder

 BLF6G27L-50BN pdf lookup

 BLF6G27L-50BN substitution

 BLF6G27L-50BN replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.