BLF6G27LS-40P Datasheet and Replacement
Type Designator: BLF6G27LS-40P
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: SOT1121B
BLF6G27LS-40P substitution
BLF6G27LS-40P Datasheet (PDF)
blf6g27-100 blf6g27ls-100.pdf

BLF6G27-100; BLF6G27LS-100WiMAX power LDMOS transistorRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D
blf6g27l-50bn blf6g27ls-50bn.pdf

BLF6G27L-50BN; BLF6G27LS-50BNPower LDMOS transistorRev. 2 7 April 2011 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(
blf6g27-135 blf6g27ls-135.pdf

BLF6G27-135; BLF6G27LS-135WiMAX power LDMOS transistorRev. 02 26 May 2008 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(p)
Datasheet: BLF6G27-10G , BLF6G27-135 , BLF6G27-45 , BLF6G27-75 , BLF6G27L-40P , BLF6G27L-50BN , BLF6G27LS-100 , BLF6G27LS-135 , IRF9540N , BLF6G27LS-50BN , BLF6G27LS-75 , BLF6G27S-45 , BLF6G38-10 , BLF6G38-100 , BLF6G38-10G , BLF6G38-25 , BLF6G38-50 .
Keywords - BLF6G27LS-40P MOSFET datasheet
BLF6G27LS-40P cross reference
BLF6G27LS-40P equivalent finder
BLF6G27LS-40P lookup
BLF6G27LS-40P substitution
BLF6G27LS-40P replacement



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