BLF6G27LS-75
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF6G27LS-75
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28
V
|Id|ⓘ - Maximum Drain Current: 18
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14
Ohm
Package:
SOT502B
BLF6G27LS-75
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF6G27LS-75
Datasheet (PDF)
4.1. Size:299K philips
blf6g27-100 blf6g27ls-100.pdf
BLF6G27-100; BLF6G27LS-100WiMAX power LDMOS transistorRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D
4.2. Size:218K philips
blf6g27l-50bn blf6g27ls-50bn.pdf
BLF6G27L-50BN; BLF6G27LS-50BNPower LDMOS transistorRev. 2 7 April 2011 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(
4.3. Size:92K philips
blf6g27-135 blf6g27ls-135.pdf
BLF6G27-135; BLF6G27LS-135WiMAX power LDMOS transistorRev. 02 26 May 2008 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(p)
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